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Toward a very low-power integrated charge preamplifier by using III-V field effect transistors.
- Source :
-
IEEE Transactions on Nuclear Science . Jun98 Part 4 of 4, Vol. 45 Issue 3, p1656. 10p. 1 Diagram, 16 Graphs. - Publication Year :
- 1998
-
Abstract
- Compares the performance of silicone (Si) and gallium arsenide (GaAs) field transistors, while highlighting the conditions required for dissipation. Criteria for the optimum choice of input transistor dimensions; Effects of electronic noise of read-out circuit on detection systems; How resolution of a detection system can be characterized.
- Subjects :
- *SILICONES
*GALLIUM arsenide
*ENERGY dissipation
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 45
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 919002
- Full Text :
- https://doi.org/10.1109/23.685288