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Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate.
- Source :
-
Solid-State Electronics . Nov2013, Vol. 89, p194-197. 4p. - Publication Year :
- 2013
-
Abstract
- Highlights: [•] IGZO TFT with GeO2/TiO2/GeO2 dielectric has been fabricated on PC substrate at room temperature. [•] RT Flexible TFT exhibits small gate swing of 0.132V/decade and good Ion/Ioff ratio of 2.4×107. [•] Such good performance was attributed to combined effect of higher-κ TiO2 and large band gap GeO2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 89
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 91740460
- Full Text :
- https://doi.org/10.1016/j.sse.2013.08.009