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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors.

Authors :
Jeon, Dae-Young
Park, So Jeong
Mouis, Mireille
Barraud, Sylvain
Kim, Gyu-Tae
Ghibaudo, Gérard
Source :
Solid-State Electronics. Nov2013, Vol. 89, p139-141. 3p.
Publication Year :
2013

Abstract

Highlights: [•] A new parameter extraction method for junctionless transistors (JLTs) is reported. [•] Bulk channel mobility (μbulk ) in JLTs was extracted by the new method. [•] The new method also extracted the flat-band voltage (Vfb ) of JLTs, simultaneously. [•] 2D numerical simulation results confirm the validity of the new method. [•] Newly defined Maserjian’s-like function for gm of JLTs also proves its validity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00381101
Volume :
89
Database :
Academic Search Index
Journal :
Solid-State Electronics
Publication Type :
Academic Journal
Accession number :
91740435
Full Text :
https://doi.org/10.1016/j.sse.2013.08.003