High resolution nanotopography characterization at die scale of 28nm FDSOI CMOS front-end CMP processes.

Highlights: [•] T-boxes are not representative of the die topography. [•] Full die range is not the most representative die value. [•] Full die and die σ ranges provide new and relevant data about die topography. [•] Characterization of CMP impact of a structure on its neighborhood is made possible. [•] Pattern density dependency of the CMP processes is quantifiable. [ABSTRACT FROM AUTHOR]