Characterization of silicon nitride thin films deposited by hot-wire CVD at low gas flow rates.

Highlights: [•] Silicon nitride films deposited at total gas flow rate <33sccm using hot-wire CVD. [•] Growth rate increased with NH3 flow rate and is competitive with other techniques. [•] Independent EDS and XPS corroborate each other on the N/Si ratio. [•] ToF-SIMS, ERD and FTIR disclose a decreasing Si H and H concentration at higher N/Si. [•] Thickness of N-rich Si oxide interface decreased with increasing NH3 flow rate. [Copyright &y& Elsevier]