Back to Search
Start Over
Photoluminescence characterization of a high-efficiency Cu2ZnSnS4 device.
- Source :
-
Journal of Applied Physics . Oct2013, Vol. 114 Issue 15, p154905. 5p. 2 Charts, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- We report on low-temperature (4 K) photoluminescence of an 8.3% efficient Cu2ZnSnS4 photovoltaic device. Measurements were recorded as a function of excitation intensity, and the evolution of the resulting spectra is discussed. The spectra indicate that the radiative recombination is characteristic of heavily compensated material with a high quasi donor-acceptor pair density, as determined by the relationship between peak height, peak position, and excitation intensity, as well as the carrier lifetimes at different wavelengths. The blue-shift of the defect-derived peak position is used to estimate the quasi donor-acceptor pair spacing and density. The data indicate an average pair spacing of roughly 3.3 nm, yielding an overall total radiative-defect density of ∼1.3 × 1019 cm-3. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 114
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 91552919
- Full Text :
- https://doi.org/10.1063/1.4825317