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Algebraic Current-voltage and Voltage Dependent Resistance Expressions for Ballistic Nano Conductors and Their Low Voltage Nonlinearity.
- Source :
-
Nano-Micro Letters . 2013, Vol. 5 Issue 3, p169-173. 5p. 1 Diagram, 1 Chart, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- In this study, an algebraic current-voltage (I-V ) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer's formulation. A voltage and temperature dependent resistance expression is also obtained. It is shown that the presented algebraic I-V expression and the original Landauer's formula give the same characteristics as expected. Moreover, the I-V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion (THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 23116706
- Volume :
- 5
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Nano-Micro Letters
- Publication Type :
- Academic Journal
- Accession number :
- 90648708
- Full Text :
- https://doi.org/10.1007/BF03353747