Polarity dependent carbon enrichment on 6H–SiC{<f>0 0 0 1</f>} due to low energy ion bombardment

Ion sputtering induced surface composition changes by applying various ions (He<f>+</f>, Ne<f>+</f>, Ar<f>+</f>, Xe<f>+</f>) in the energy range of 0.2–1.5 keV, was measured by AES on the polar faces of 6H–SiC{0 0 0 1}. Carbon enrichment was observed on both faces, and it was different if Ne<f>+</f>, Ar<f>+</f>, Xe<f>+</f> ion sputtering was applied with ion energy lower than 0.4–0.8 keV (depending on projectile); no different enrichment was found for He<f>+</f> ion bombardment at any energy (in this range). Thus C/Si ratio measured by AES after low energy ion (e.g. Xe<f>+</f>) bombardment can be used to identify polarity of the surface. [Copyright &y& Elsevier]