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Electrically tunable topological state in [111]perovskite materials with an antiferromagnetic exchange field.
- Source :
-
New Journal of Physics . 2013, Vol. 15 Issue 6, p1-10. 10p. - Publication Year :
- 2013
-
Abstract
- We propose a scheme of band engineering by means of staggered electric potential, antiferromagnetic exchange field and intrinsic spin-orbit coupling for electrons on a honeycomb lattice. With fine control on the degrees of freedom of spin, sublattice and valley, one can achieve a topological state with simultaneous non-zero charge and spin Chern numbers. With first principles calculations, we confirm that the scheme can be realized by material modification in perovskite G-type antiferromagnetic insulators grown along the [111] direction, where Dirac electrons from d orbits are achieved on an atomic sheet of a buckled honeycomb lattice. In a finite sample, this state provides a spin-polarized quantum edge current, robust to both non-magnetic and magnetic defects, with the spin polarization reversible by electric field, and is thus ideal for spintronics applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13672630
- Volume :
- 15
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- New Journal of Physics
- Publication Type :
- Academic Journal
- Accession number :
- 90130934
- Full Text :
- https://doi.org/10.1088/1367-2630/15/6/063031