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Heterodyne and subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor.
- Source :
-
Applied Physics Letters . 8/26/2013, Vol. 103 Issue 9, p093505-093505-5. 1p. 3 Graphs. - Publication Year :
- 2013
-
Abstract
- We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz antenna connected to the channel terminals and a gate length of 1 μm. We investigated frequency mixing in the transistor's channel by measuring, with a quasi-optical setup, the heterodyne, second- and third-order subharmonic mixing signal at 0.592 THz. The dependence on the gate voltage and on the radiation power of both the local-oscillator and the radio-frequency signals was studied for all mixing orders. The conditions for full-plasmonic-mixing are fulfilled in our transistor at room temperature. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 90048296
- Full Text :
- https://doi.org/10.1063/1.4819734