Kinetically controlled growth of gallium on stepped Si (553) surface.

Highlights: [•] This is the first report for the kinetically controlled growth of few monolayers of gallium metal on high index stepped Si (553) surface. Room temperature and higher substrate temperature growth kinetics of gallium metal atoms on stepped Si (553) surface have been analyzed by Auger electrons spectroscopy. Low energy electron diffraction and thermal stability behavior have been investigated. During adsorption at room temperature and high substrate temperature gallium follows different growth modes and various novel superstructural phases have been developed. [Copyright &y& Elsevier]