Growth and structural analysis of metalorganic chemical vapor deposited (1120) Mg[sub x]Zn[sub 1-x]O (0<x<0.33) films on (0112) R-plane Al[sub 2]O[sub 3] substrates.

Mg[sub x]Zn[sub 1-x]O (0<x<0.33) thin films were grown on R-plane (01&1macr;2) sapphire substrate by metalorganic chemical vapor deposition. It was found that a thin ZnO buffer layer with a minimum thickness of ∼50 Å is needed to achieve wurtzite-type Mg[sub x]Zn[sub 1-x]O films on R-plane sapphire. The x-ray Δω(11&2macr;0) rocking curve and Δ2 θ(11&2macr;0) full width at half maximum for Mg[sub 0.18]Zn[sub 0.82]O film were measured to be 0.275° and 0.18°, respectively, indicating strong mosaicity and strain in the films. In-plane reflections show the lower lattice mismatch along the c axis of the Mg[sub x]Zn[sub 1-x]O films on R-plane sapphire. Optical transmission spectra indicate the good quality of the films. [ABSTRACT FROM AUTHOR]