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The Cause of Subthreshold Leakage Currents Induced by Nucleons and Ions in Power MOSFETs.
- Source :
-
IEEE Transactions on Nuclear Science . Jul2013 Part 1, Vol. 60 Issue 4, p2530-2536. 7p. - Publication Year :
- 2013
-
Abstract
- Additional evidence is presented and discussed on the mechanism for the subthreshold leakage currents induced in power MOSFETs by single nucleon and ion interactions. The new evidence excludes microdose in gate oxides and instead points to microdose in field/edge oxides. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 60
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 89803201
- Full Text :
- https://doi.org/10.1109/TNS.2013.2246870