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Solution-processed zinc-indium-tin oxide thin-film transistors for flat-panel displays.
- Source :
-
Applied Physics Letters . 8/12/2013, Vol. 103 Issue 7, p072110-072110-5. 1p. 1 Diagram, 3 Graphs. - Publication Year :
- 2013
-
Abstract
- Highly uniform thin-films of zinc-indium-tin oxide (ZITO) semiconductors were formed using solution process with wet-annealing at a low temperature of 250 °C. The solution-processed ZITO thin-film transistors with a top-gate staggered structure were fabricated to exhibit field-effect mobility of 2.04 ± 0.28 cm2/Vs at saturation region, threshold voltage (Vth) of 2.15 ± 0.75 V, subthreshold slope of 0.27 ± 0.14 V/dec. and excellent reliability (ΔVth = -4.35 V) for negative bias temperature illumination stress. Based on the performance, a 10.1 in. full-color liquid crystal display was demonstrated by the optimized full photolithography process. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 89798915
- Full Text :
- https://doi.org/10.1063/1.4818724