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Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region.
- Source :
-
Applied Physics Letters . 7/29/2013, Vol. 103 Issue 5, p051120. 3p. 3 Graphs. - Publication Year :
- 2013
-
Abstract
- InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1-xInxSb buffer layers and GaSb substrates by molecular beam epitaxy. At the wavelength of 8 μm and T = 150 K, devices with 1-μm thick absorbers demonstrated an external quantum efficiency of 18% under a bias voltage of 0.45 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 89546855
- Full Text :
- https://doi.org/10.1063/1.4817823