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Graded-gap AlInN Gunn diodes.
- Source :
-
Semiconductor Physics, Quantum Electronics & Optoelectronics . 2012, Vol. 15 Issue 2, p176-180. 5p. - Publication Year :
- 2012
-
Abstract
- The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15608034
- Volume :
- 15
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Semiconductor Physics, Quantum Electronics & Optoelectronics
- Publication Type :
- Academic Journal
- Accession number :
- 89545836