Back to Search Start Over

Graded-gap AlInN Gunn diodes.

Authors :
Storozhenko, I. P.
Yaroshenko, A. N.
Kaydash, M. V.
Source :
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012, Vol. 15 Issue 2, p176-180. 5p.
Publication Year :
2012

Abstract

The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
15608034
Volume :
15
Issue :
2
Database :
Academic Search Index
Journal :
Semiconductor Physics, Quantum Electronics & Optoelectronics
Publication Type :
Academic Journal
Accession number :
89545836