Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices.

Highlights: [•] The HKMG Fin MOS device is fabricated with different interface between SiGe and SiO2. [•] The interface roughness between the SiGe and SiO2 is extracted as a function of root mean square by analysis HRTEM. [•] The interface roughness between the SiGe and SiO2 is modeled by corrected mobility model. [•] Mobility of SiGe along (110) limits the total effective mobility on FinFET device. [•] The interface roughness influences the mobility of SiGe. [Copyright &y& Elsevier]