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Modeling of the output characteristics of advanced n-MOSFETs after a severe gate-to-channel dielectric breakdown.
- Source :
-
Microelectronic Engineering . Sep2013, Vol. 109, p322-325. 4p. - Publication Year :
- 2013
-
Abstract
- Highlights: [•] We model the effects of an oxide breakdown on the transistor behaviour. [•] We consider the potentiometer model. [•] We show how the relevant feature that characterize the dielectric breakdown affect the transistor’s transconductances. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 109
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 89278104
- Full Text :
- https://doi.org/10.1016/j.mee.2013.03.030