The intrinsic parameter fluctuation on high-κ/metal gate bulk FinFET devices.

Highlights: [•] The intrinsic parameter fluctuation is studied for the 16-nm-gate TiN/HfO2 bulk FinFETs. [•] The fluctuation includes the random discrete dopant, the random interface trap, and the random work function, simultaneously. [•] The full 3D simulated threshold voltage fluctuation is 26.2mV for the N-type bulk FinFET. [•] The statistical sum of these fluctuations is 9.5% overestimation because independence assumption on these random variables is invalid. [•] Compared with the planar MOSFET, more than 50% reduction on the threshold voltage fluctuation is estimated. [Copyright &y& Elsevier]