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Control of metal/oxide electron barriers in CBRAM cells by low work-function liners.
- Source :
-
Microelectronic Engineering . Sep2013, Vol. 109, p156-159. 4p. - Publication Year :
- 2013
-
Abstract
- Highlights: [•] Interface barriers for electrons at Al2O3/metal interfaces can be controlled by liners. [•] Tantalum and titanium liners allow for >1eV barrier lowering at Cu/Al2O3 interface. [•] Application of Hf liner is hindered by oxygen scavenging from Al2O3. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 109
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 89278064
- Full Text :
- https://doi.org/10.1016/j.mee.2013.03.088