Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures.

Highlights: [•] We show the effect of surface treatment between the Al2O3 and the recess-etched GaN. [•] We have investigated the effect of TMAH surface treatment. [•] The C–V characteristics were improved with the surface treatment. [•] We result low effective oxide charge and interface trap density. [•] We result less charge trapping in the gate dielectric. [Copyright &y& Elsevier]