Voltage- and Temperature-Dependent Gate Capacitance and Current Model: Application to ZrO[sub 2] n-channel MOS Capacitor.

Reports on the development of a tunneling model to understand the gate current as a function of voltage and temperature, based on the energy-dispersion relation in each region of the gate-dielectric-silicon system. Calculation of the gate capacitance from Schrodinger and Poisson equations subject to Fermi-Dirac statistics.