Ternary mixed crystal effects on interface optical phonon and electron-interface optical phonon coupling in wurtzite GaN/Al x Ga1− x N quantum wells.

Highlights: [•] IO branches are different with the increase of aluminum concentration. [•] IO phonons in high frequency range increase linearly. [•] IO phonons in low frequency range do not increase linearly. [•] The electron-IO phonon coupling in high frequency range increase linearly. [•] The electron-IO phonon coupling in higher aluminum concentration range is stronger. [Copyright &y& Elsevier]