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Low-temperature crystallization of high performance Pb0.4Sr0.6TiO3 films compatible with the current silicon-based microelectronic technology.
- Source :
-
Applied Physics Letters . 5/27/2013, Vol. 102 Issue 21, p212901. 4p. 4 Graphs. - Publication Year :
- 2013
-
Abstract
- This investigation presents a simple approach to realize the low temperature crystallization of Pb0.4Sr0.6TiO3 thin films at 400 °C by taking advantage of well controlled lead excess and kinetic-driving-force compensated thermodynamics crystalline via sputtering deposition. The thin films prepared at low temperature show fine-grained micro-structure because of the suppressed grain growth, furthermore, the intrinsic dielectric response can be modulated by the distinct level of crystallinity. The film processed at 450 °C exhibited a dielectric constant of 435 and high figure merit of 130 at 400 kV/cm, superior ferroelectric property, and stable performance with temperature and frequency. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 102
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 87925096
- Full Text :
- https://doi.org/10.1063/1.4807792