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Characterization of silicon wafer bonding for Power MEMS applications
- Source :
-
Sensors & Actuators A: Physical . Jan2003, Vol. 103 Issue 1/2, p1. 8p. - Publication Year :
- 2003
-
Abstract
- This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 °C was characterized. The silicon–silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending–delamination technique. [Copyright &y& Elsevier]
- Subjects :
- *SEMICONDUCTOR wafers
*SILICON
Subjects
Details
- Language :
- English
- ISSN :
- 09244247
- Volume :
- 103
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Sensors & Actuators A: Physical
- Publication Type :
- Academic Journal
- Accession number :
- 8762533
- Full Text :
- https://doi.org/10.1016/S0924-4247(02)00329-1