Selective area growth of GaN on r-plane sapphire by MOCVD.

In this study we investigate the possibility of a-GaN ELOG process and its peculiarities for stripes of various orientations. It is shown that stripe orientation allows governing such important parameters of ELOG-process as lateral growth rate, voids high, fast growth direction. The intermediate orientations of stripe windows (differ from conventional (0001) and (1-100)) can be effectively used for double-cross ELOG process. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]