Organotin Dithiocarbamates:Single-Source Precursorsfor Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition(AACVD).

A series of diorganotin complexes of dithiocarbamates[Sn(C4H9)2(S2CN(RR′)2)2] (R, R′ = ethyl (1); R =methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′)2)2] (R, R′ = ethyl (5); R =methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized.Single-crystal X-ray structures of 2, 3,and 8were determined. Thermogravimetric analysis (TGA)showed single-step decomposition for the complexes 1, 3, and 5–8, and double-stepdecomposition for the complexes 2and 4between195 °C and 325 °C. Complexes 1–4were used as single-source precursors for the depositionof SnS thin films by aerosol-assisted chemical vapor deposition (AACVD)at temperatures from 400 °C to 530 °C. Orthorhombic SnSthin films were deposited from all four complexes at all depositiontemperatures. The films were characterized by UV–vis spectroscopy,powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electronmicroscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), andalso electrical resistivity measurements. [ABSTRACT FROM AUTHOR]