Role of indium in highly crystalline ZnO thin films.

Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73×10-3 ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63×10-3 ohm.cm and mobility of 126.4 cm2/V.s are achieved. [ABSTRACT FROM AUTHOR]