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Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2012 Part 1, Vol. 59 Issue 6, p2974-2978. 5p. - Publication Year :
- 2012
-
Abstract
- <?Pub Dtl?>Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based non-volatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semiconductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 59
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 84360333
- Full Text :
- https://doi.org/10.1109/TNS.2012.2224135