Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors.

We present the results of a radiation damage experiment on Alx\rm Ga1-{\rm x}{\rm N/GaN} high electron mobility transistors. The basic mechanism underlying the observed high radiation tolerance appears to be a strong internal piezoelectric field near the two-dimensional electron gas that causes scattered carriers to be reinjected. [ABSTRACT FROM AUTHOR]