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Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys
- Source :
-
Journal of Crystal Growth . Jan2013, Vol. 362, p197-201. 5p. - Publication Year :
- 2013
-
Abstract
- Abstract: We report the behavior of nitrogen implanted into GaAs wafer upon annealing in the range of 500°C to 1000°C. The SIMS results show out-diffusion of nitrogen and the peaks in the distribution profiles of implanted nitrogen broadening. XPS measurements indicate that the N bonding configuration before annealing is contributed by NAs, interstitial NN and the NAs complex. However, NAs complex disappears completely upon annealing at temperature higher than 700°C. The spectra and quantitative analysis reveal that a saturation of NAs happens as annealing temperature increases. Before the saturation, the substitional NAs keeps rising, which leads to the elevation of n-type doping level in host. Whereas beyond the saturation, the excess thermal energy beyond saturation triggers the kick-out mechanism and induces dramatic increase in the amount of NN split interstitials, resulting in suppression of the nitrogen out-diffusion during annealing and pining of the Fermi level. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 362
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 83936101
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2012.03.059