Hole system heating by ultrafast interband energy transfer in optically excited Ge/SiGe quantum wells.

An efficient scattering process between the electron system in the L valley and the hole system in the Γ valley in Ge/SiGe quantum wells is identified. Its dependencies on excitation energy and carrier density are analyzed using spectrally and time-resolved pump-probe experiments. This carrier scattering causes an ultrafast heating of the hole system leading to an additional bleaching signature appearing a few tens of picoseconds after the excitation. Our findings are supported by microscopic calculations of the absorption spectra for various carrier densities and temperatures based on the semiconductor Bloch equations. Additionally, this scattering mechanism explains the enhanced free carrier absorption observed in previously reported pump-probe experiments. [ABSTRACT FROM AUTHOR]