Atomic structure of closely stacked InAs submonolayer depositions in GaAs.

The atomic structure of multiple buried InAs depositions with a nominal thickness below one monolayer, separated by thin GaAs spacer layers, was investigated using Cs-corrected high-resolution transmission electron microscopy. InAs composition maps were obtained with sub-nanometer resolution by local evaluation of the {200}-Fourier coefficients of the lattice images. A strong segregation behavior of the InAs depositions is found, which leads to significant intermixing with the spacer layers. The segregation coefficient R≈0.7 is found to be independent of the spacer thickness, even for thin spacers with a thickness near the segregation length of about 3 monolayers. [ABSTRACT FROM AUTHOR]