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Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 10/11/2012, Vol. 48 Issue 21, p1340-1341. 2p. - Publication Year :
- 2012
-
Abstract
- An antireflection coating was created for InP-based pin photodiodes using natural lithography with 100 nm-diameter SiO2 spheres. The surface showed a normal-incidence reflection of <5% for wavelengths from 900 to 2500 nm. Photodiodes with surface texturing showed an enhancement in quantum efficiency with no dark current degradation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 48
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 82713286
- Full Text :
- https://doi.org/10.1049/el.2012.2849