Fast and scalable memory characteristics of Ge-doped SbTe phase change materials.

MLA

Cheong, Byung-ki, et al. “Fast and Scalable Memory Characteristics of Ge-Doped SbTe Phase Change Materials.” Physica Status Solidi (B), vol. 249, no. 10, Oct. 2012, pp. 1985–91. EBSCOhost, https://doi.org/10.1002/pssb.201200419.

APA

Cheong, B., Lee, S., Jeong, J., Park, S., Han, S., Wu, Z., & Ahn, D.-H. (2012). Fast and scalable memory characteristics of Ge-doped SbTe phase change materials. Physica Status Solidi (B), 249(10), 1985–1991. https://doi.org/10.1002/pssb.201200419

Chicago

Cheong, Byung-ki, Suyoun Lee, Jeung-hyun Jeong, Sohee Park, Seungwu Han, Zhe Wu, and Dong-Ho Ahn. 2012. “Fast and Scalable Memory Characteristics of Ge-Doped SbTe Phase Change Materials.” Physica Status Solidi (B) 249 (10): 1985–91. doi:10.1002/pssb.201200419.