Cite
Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers.
MLA
Hayashi, T., et al. “Enhancement and Control of Carrier Lifetimes in P-Type 4H-SiC Epilayers.” Journal of Applied Physics, vol. 112, no. 6, Sept. 2012, p. 064503. EBSCOhost, https://doi.org/10.1063/1.4748315.
APA
Hayashi, T., Asano, K., Suda, J., & Kimoto, T. (2012). Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers. Journal of Applied Physics, 112(6), 064503. https://doi.org/10.1063/1.4748315
Chicago
Hayashi, T., K. Asano, J. Suda, and T. Kimoto. 2012. “Enhancement and Control of Carrier Lifetimes in P-Type 4H-SiC Epilayers.” Journal of Applied Physics 112 (6): 064503. doi:10.1063/1.4748315.