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Matrix effect on the photoluminescence of Si nanocrystal.
- Source :
-
Journal of Nanoparticle Research . Sep2012, Vol. 14 Issue 9, p1-7. 7p. 2 Diagrams, 4 Graphs. - Publication Year :
- 2012
-
Abstract
- To examine the matrix effect on the light emission of Si nanocrystal (Si-NC), we investigated the photoluminescence (PL) of Si-NC from multilayered samples of Si/SiO and SiO/SiO and single-layered pure Si thin films, which had all been annealed in nitrogen at 1,100 °C for 1 h so as to form Si-NCs. The size range of Si-NC is 1-10 nm. It was found that the density of Si-NC in the pure Si> that in Si/SiO> that in SiO/SiO, but the PL intensity of Si-NC from pure Si< that from Si/SiO< that from SiO/SiO. On the other hand, the PL intensity of Si-NC from Si/SiO sample is higher than that from Si/SiN one. All these results are related to the difference in matrix surrounding Si-NCs, which causes differences in carrier confinement or/and interface state. The results suggest that for light emission of Si-NC, the matrix effect is determinative, and can be more important than the density of Si-NC itself. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13880764
- Volume :
- 14
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Nanoparticle Research
- Publication Type :
- Academic Journal
- Accession number :
- 80730963
- Full Text :
- https://doi.org/10.1007/s11051-012-1097-9