Electrical characteristics of SiGe pMOSFET devices with tantalum or titanium oxide higher-k dielectric stack

Abstract: Metal oxide semiconductor field effect transistors (MOSFET) with SiGe channel and higher-k gate dielectric are studied in this work. Samples with TaON/HfO2 or TiON/HfO2 stacks show larger drain current, better transconductance, and smaller subthreshold swing than that with single HfO2 layer. In addition, the reliability for SiGe pMOSFET device is clearly improved with TaON/HfO2 stacks in terms of degradation of Gm and Vth after hot-carrier stress. The integration of SiGe channel with TaON higher-k dielectric is useful for high performance pMOSFETs. [Copyright &y& Elsevier]