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Ultrashort hole capture time in Mg-doped GaN thin films.
- Source :
-
Applied Physics Letters . 11/18/2002, Vol. 81 Issue 21, p3975. 3p. 3 Graphs. - Publication Year :
- 2002
-
Abstract
- Hole capture time in p-type GaN was measured by using a femtosecond pump-probe technique. The capture time constant that holes are trapped by Mg-related states was found to be shorter than 10 ps. The hole capture time increases with decreased hole excess energy. By comparing two samples with different doping concentrations, it was found that the hole capture time also decreases with increased doping concentrations. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 81
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7903454
- Full Text :
- https://doi.org/10.1063/1.1522827