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Highly c-axis oriented LiNbO3 thin film grown on SiO2/Si substrates by pulsed laser deposition
- Source :
-
Materials Letters . Aug2002, Vol. 55 Issue 4, p265. 4p. - Publication Year :
- 2002
-
Abstract
- Highly c-axis oriented LiNbO3 thin film has been deposited on the SiO2/Si substrate by KrF excimer pulsed laser deposition (PLD) technique under optimized conditions of 30-Pa oxygen pressure and 600 °C substrate temperature. The amorphous SiO2 buffer layer was coated on the Si (001) wafer by thermal oxidation in situ. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements confirm that the film shows superior crystalline quality and highly c-axis oriented texture. Neither the Li-enriched LiNbO3 target nor a biased electric field was applied during the deposition. [Copyright &y& Elsevier]
- Subjects :
- *LITHIUM niobate
*EPITAXY
*SILICON oxide
Subjects
Details
- Language :
- English
- ISSN :
- 0167577X
- Volume :
- 55
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Materials Letters
- Publication Type :
- Academic Journal
- Accession number :
- 7855580
- Full Text :
- https://doi.org/10.1016/S0167-577X(01)00658-9