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Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique
- Source :
-
Materials Science & Engineering: B . Jul2002, Vol. 95 Issue 1, p73. 4p. - Publication Year :
- 2002
-
Abstract
- This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n+-GaN layer exhibited contact resistivity of mid 10−6 Ω cm2 and resulted in a linear I–V characteristics during an operation of device. The maximum drain–source current density is approximately 174 mA mm−1 (at VGS=1 V), and the transconductance of approximately 68 mS mm−1 (at VGS=−1.1 V, VDS=6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm−1 at 1.8 GHz for a 1400-μm wide gate device. [Copyright &y& Elsevier]
- Subjects :
- *PHOTOELECTROCHEMISTRY
*ELECTROCHEMISTRY
Subjects
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 95
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Materials Science & Engineering: B
- Publication Type :
- Academic Journal
- Accession number :
- 7841271
- Full Text :
- https://doi.org/10.1016/S0921-5107(02)00165-4