ChemInform Abstract: Substitutional Mechanism of Ni into the Wide-Band-Gap Semiconductor InTaO4 and Its Implications for Water Splitting Activity in the Wolframite Structure Type.

Authors :: Malingowski, Andrew C.
Stephens, Peter W.
Huq, Ashfia
Huang, Qingzhen
Khalid, Syed
Khalifah, Peter G.
Source :: ChemInform. Aug2012, Vol. 43 Issue 34, pno-no. 1p.
Publication Year :: 2012
Abstract: Substitution of Ni for In in InTaO4 is reinvestigated by synchrotron X-ray and neutron powder diffraction, diffuse reflectance spectroscopy, XANES, and magnetic susceptibility measurements, providing insights into its previously reported photoactivity. [ABSTRACT FROM AUTHOR]

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