Effects of electron temperature on the quality of a-Si:H and μc-Si film

Effects of electron temperature (Te) on the quality of deposited silicon thin film were investigated using a modified magnetron typed plasma source equipped with a Te control system. Two kinds of Si films were prepared; amorphous silicon (a-Si:H) and micro-crystalline silicon (μc-Si). In the a-Si:H deposition, Te reduction from 4.75 eV to 0.4 eV increased the ratio of photo to dark conductivity, σp/σd, by a factor of 30 and decreased the SiH2 concentration by a factor of two. In the μc-Si deposition, the crystallinity was also improved by a slight reduction of Te. However, we found a presence of an optimum Te(=3.9 eV) at which the crystal fraction becomes maximum. [Copyright &y& Elsevier]