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Low-dislocation-density AlxGa1−xN single crystals grown on grooved substrates
- Source :
-
Materials Science & Engineering: B . May2002, Vol. 93 Issue 1-3, p197. 5p. - Publication Year :
- 2002
-
Abstract
- We propose a new approach to the direct growth of low-dislocation-density AlxGa1−xN single crystal films on highly mismatched substrates. Four different substrates, basal-plane sapphire (0001) and (11<f>2¯</f>0), 6H–SiC(0001)Si and Si(111), were used. The surface of the substrates was patterned with periodic grooves. In this technique, neither a selective growth mask nor a patterned GaN single crystal film were used. Low-dislocation-density areas were observed above the trench area and at the boundaries of the terrace and trench areas. The dislocation density was reduced to mid 106 cm−2 which is lower than that of the films grown directly on the planar substrates by at least two orders of magnitude. [Copyright &y& Elsevier]
- Subjects :
- *GALLIUM nitride
*CRYSTAL growth
Subjects
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 93
- Issue :
- 1-3
- Database :
- Academic Search Index
- Journal :
- Materials Science & Engineering: B
- Publication Type :
- Academic Journal
- Accession number :
- 7796799
- Full Text :
- https://doi.org/10.1016/S0921-5107(02)00012-0