Strain relaxation and interfacial stability in III–V semiconductor strained-layer heteroepitaxy: atomistic and continuum modeling and comparisons with experiments

MLA

Maroudas, Dimitrios, et al. “Strain Relaxation and Interfacial Stability in III–V Semiconductor Strained-Layer Heteroepitaxy: Atomistic and Continuum Modeling and Comparisons with Experiments.” Computational Materials Science, vol. 23, no. 1–4, Apr. 2002, p. 250. EBSCOhost, https://doi.org/10.1016/S0927-0256(01)00230-0.

APA

Maroudas, D., Zepeda-Ruiz, L. A., Pelzel, R. I., Nosho, B. Z., & Henry Weinberg, W. (2002). Strain relaxation and interfacial stability in III–V semiconductor strained-layer heteroepitaxy: atomistic and continuum modeling and comparisons with experiments. Computational Materials Science, 23(1–4), 250. https://doi.org/10.1016/S0927-0256(01)00230-0

Chicago

Maroudas, Dimitrios, Luis A. Zepeda-Ruiz, Rodney I. Pelzel, Brett Z. Nosho, and W. Henry Weinberg. 2002. “Strain Relaxation and Interfacial Stability in III–V Semiconductor Strained-Layer Heteroepitaxy: Atomistic and Continuum Modeling and Comparisons with Experiments.” Computational Materials Science 23 (1–4): 250. doi:10.1016/S0927-0256(01)00230-0.