Back to Search
Start Over
Low-Loss, Silicon Integrated,Aluminum Nitride PhotonicCircuits and Their Use for Electro-Optic Signal Processing.
Low-Loss, Silicon Integrated,Aluminum Nitride PhotonicCircuits and Their Use for Electro-Optic Signal Processing.
- Source :
-
Nano Letters . Jul2012, Vol. 12 Issue 7, p3562-3568. 7p. - Publication Year :
- 2012
-
Abstract
- Photonic miniaturization requires seamless integrationof linearand nonlinear optical components to achieve passive and active functionssimultaneously. Among the available material systems, silicon photonicsholds immense promise for optical signal processing and on-chip opticalnetworks. However, silicon is limited to wavelengths above 1.1 μmand does not provide the desired lowest order optical nonlinearityfor active signal processing. Here we report the integration of aluminumnitride (AlN) films on silicon substrates to bring active functionalitiesto chip-scale photonics. Using CMOS-compatible sputtered thin filmswe fabricate AlN-on-insulator waveguides that exhibit low propagationloss (0.6 dB/cm). Exploiting AlNâs inherent Pockels effectwe demonstrate electro-optic modulation up to 4.5 Gb/s with very lowenergy consumption (down to 10 fJ/bit). The ultrawide transparencywindow of AlN devices also enables high speed modulation at visiblewavelengths. Our low cost, wideband, carrier-free photonic circuitshold promise for ultralow power and high-speed signal processing atthe microprocessor chip level. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15306984
- Volume :
- 12
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Nano Letters
- Publication Type :
- Academic Journal
- Accession number :
- 77691642
- Full Text :
- https://doi.org/10.1021/nl3011885