A high-linearity SiGe RF power amplifier for 3 G and 4 G small basestations.

This article presents the design and evaluation of a linear 3.3 V SiGe power amplifier for 3 G and 4 G femtocells with 18 dBm modulated output power at 2140 MHz. Different biasing schemes to achieve high linearity with low standby current were studied. The adjacent channel power ratio linearity performance with wide-band code division multiple access (3 G) and long term evolution (4 G) downlink signals were compared and differences analysed and explained. [ABSTRACT FROM PUBLISHER]