<atl>Tunnel barriers for an all-high-<f>Tc</f> single electron tunneling transistor

Authors :: Lombardi, F.
Tzalenchuk, A.Ya.
Kubatkin, S.E.
Tafuri, F.
Ivanov, Z.G.
Delsing, P.
Claeson, T.
Source :: Physica C. Mar2002, Vol. 368 Issue 1-4, p337. 6p.
Publication Year :: 2002
Abstract: We have studied possible implementations of high-resistance tunnel barriers for an all-YBa<f>2</f>Cu<f>3</f>O<f>7−δ</f> superconducting single-electron transistor (SSET). The step-edge and biepitaxial techniques have been employed to fabricate the junctions. Both technologies appear very promising for the implementation of all-high-<f>Tc</f> SSET. [Copyright &y& Elsevier]

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