Molecular dynamics simulation of Si nanoclusters in high rate and low temperature epitaxy.

Si nanocluster formation during rapid cooling from high temperature Si vapors and its subsequent interaction with substrate was simulated by molecular dynamics. It was confirmed that several nm sized clusters with a loosely bound structure form during rapid cooling and their metastable structures are retained even at temperatures below the Si melting point. Such globular clusters tend to rearrange themselves upon impingement to be a similar structure to that of the substrate, at least near the cluster/substrate interface. This is suggestive of the role of clusters formed under the mesoplasma condition as growth precursors for fast rate epitaxy. [ABSTRACT FROM AUTHOR]