Effect of self assembled monolayer modification of SiO2 dielectric on the performance of copper phthalocyanine organic thin film transistor.

Self assembled monolayer (SAM) of Octadecyltrichlorosilane (OTS) was deposited on thermally grown SiO2 dielectric of 200 nm thickness and the electrical performance of copper phthalocyanine (CuPc) based OFETs was studied before and after SAM modification of dielectric. The field effect mobility of charge carriers and drain current on/off ratio wwre found to be improved by about one order of magnitude due to improved crystallinity of CuPc film on SAM modified SiO2. The inverse sub-threshold slope was reduced significantly indicating reduction of trap density at the dielectric/semiconductor interface by 50% as a result of SAM treatment. [ABSTRACT FROM AUTHOR]